Solid-state XeF(D → X) laser at 286 nm

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Solid-state XeF(D ? X) laser at 286 nm.

XeF-doped Ar crystals pumped at 248 nm undergo stimulated emission over the D-X band at 286 nm. Spectral narrowing measurements indicate a net gain in excess of 6 cm(-1).

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ژورنال

عنوان ژورنال: Optics Letters

سال: 1989

ISSN: 0146-9592,1539-4794

DOI: 10.1364/ol.14.000441